| 摘要 |
PURPOSE: To provide a semiconductor device of high reliability wherein exfoliation of a wiring layer is not generated on the interface between a titanium based metal wiring layer and an insulating layer of a semiconductor device which includes the insulating film containing Si-F bonds and the titanium based metal wiring layer. CONSTITUTION: The title semiconductor device has a substrate, an insulating film 15 which is formed on the substrate and contains Si-F bonds, and a titanium based metal wiring layer 17 formed on the insulating film 15. The concentration of fluorine in the titanium based metal wiring layer is lower than 1×10<20> atoms/cm<3> . |
