METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING VIA CONTACT

摘要

PURPOSE: A method for manufacturing a semiconductor device having a via contact is provided to prevent a filling defect caused by a high aspect ratio of a whole via hole, by separating the whole via hole into the first and second via holes and by respectively forming the first and second contacts filling the first and second via holes by separate processes. CONSTITUTION: The first barrier metal layer(150) and the first interlayer dielectric(210) are formed on a metal interconnection layer formed on a semiconductor substrate(100). The first interlayer dielectric is patterned to form the first via hole(215) exposing the metal interconnection layer. The second barrier metal layer(310) and the first conductive contact filling the first via hole are formed. The second interlayer dielectric(250) is formed on the first contact and the first interlayer dielectric. The second interlayer dielectric is patterned by a dual damascene process to form the second via hole(255) which is composed of a trench and a hole under the trench and exposes the surface of the first contact. The third metal barrier layer(370) and the second conductive contact(400) filling the second via hole are formed.