| 摘要 |
PURPOSE: To prevent the situation in which write-in operation cannot be finished and to finish write-in operation quickly in accordance with a level of external power source voltage, in a semiconductor storage device having an internal boosting circuit such as a flash memory. CONSTITUTION: In the semiconductor storage device provided with an internal boosting circuit, the device is provided with a voltage detecting circuit (limiter circuit LM) detecting whether boosting voltage reaches the prescribed potential or not, and a timer which can count the prescribed time, when the voltage detecting circuit detects that boosting voltage reaches the prescribed potential, a control circuit applies the boosting voltage to a selection memory cell, and when the control circuit detects that the prescribed time elapses after the boosting circuit starts boosting operation based on count information of the timer, even if boosting voltage generated by the boosting circuit does not reach the prescribed potential, boosted voltage is applied to a selected memory cell.
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