MANUFACTURE OF COLD CATHODE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a cold cathode element which can reduce the manufacture cost, by forming a porous silicon layer in the surface of a silicon base, and oxidizing the porous silicon layer into a porous silicon oxide layer. SOLUTION: After a silicon dioxide SiO2 layer is formed on the main surface of a silicon Si base 1, the SiO2 layer is formed in a desired pattern to form an SiO2 mask 6. Then, the SiO2 mask 6 is used as a mask, and a positive electrode formation of the Si base 1 is carried out in a hydrofluoric acid solution, for example. Then, a porous silicon layer 7 is oxidized in an oxygen atmosphere to convert to a porous oxidized layer 8. After that, the silicon oxidized layer 8 is removed by using an etching liquid such as hydrofluoric acid, so as to obtain the Si base 1 with the structure whose cross section form has a silicon projection area of a trapezoidal form.