发明名称 SAMPLE ANALYZING METHOD AND SAMPLE ANALYZING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To form a particle beam source as a simple structure by adjusting kinetic energy of an emitted primary ion to a low value so that a surface of a sample is not substantially flattened by enriching the surface of the sample by the primary ion, and adjusting the kinetic energy of the primary ion to a high value so that the surface of the sample is flattened by a primary ion beam in the next place. SOLUTION: A primary ion beam 1A of a primary ion source 2 is applied to a surface of a sample 1 at an optional irradiating angle relative to a normal, and a secondary ion emitted from the sample 1 is analyzed by a mass spectrometer 3. In this case, first of all, energy of the primary ion beam 1A is reduced more than threshold value energy to sputter the sample 1, and an area close to the surface of the sample 1 is enriched by a primary ion. Next, the energy of the primary ion beam 1A is remarkably enhanced, and the sample 1 is flattened. The energy is adjusted by an emitting parameter of the primary ion source 2. Therefore, a device can be made compact.</p>
申请公布号 JPH11102653(A) 申请公布日期 1999.04.13
申请号 JP19980133759 申请日期 1998.05.15
申请人 ATOMIKA INSTR GMBH 发明人
分类号 G01N23/225;G01N27/62;H01J37/252;H01J37/256;H01J49/06;H01J49/14;(IPC1-7):H01J37/252 主分类号 G01N23/225
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