METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor unit is provided to secure margin for metallic wiring process by reducing the pitch between cell region and peripheral circuit region. CONSTITUTION: A first interlayer dielectric is formed at a peripheral circuit region before a charge storage electrode is formed at a cell region. The level of the first interlayer dielectric is set identical with that of the charge storage electrode. An etching barrier film is formed on the entire structure. After a second interlayer dielectric is formed on the entire structure, the second interlayer dielectric is etched selectively to open a charge storage electrode region. A charge storage electrode pattern is formed by filling a conduction film at the charge storage electrode region and removing the second interlayer dielectric with the same level of the first interlayer dielectric of the peripheral circuit region. The exposed etching barrier film is removed after removing the second inter-layer insulation film.