COMPLEMENTARY BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A complementary bipolar transistor and a method for manufacturing the same are provided to reduce the size of a semiconductor substrate and to prevent the current leakage. CONSTITUTION: A n+ buried layer is formed on a p-type semiconductor substrate(100). An epi layer(300) is formed on the semiconductor substrate(100). A plurality of diffusing areas(310) are formed in the epi layer(300). A plurality of collector areas extend downwards from a surface of a semiconductor layer and are isolated from the second conductive injection area. A tub layer is formed between the collector area and an isolated area to prevent the punch through effect. The first area is formed in the semiconductor layer. The first area is isolated from the second conductive injection area and surrounds the collector areas. The second area is formed below the collector areas. The density of the second area is lower than the density of the first area.