| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric element having a relatively near value to a human relative luminosity and capable of connecting a plurality of elements formed on the same chip in series. SOLUTION: A p+-type impurity-diffused high concentration buried layer 3 is formed on an n-type silicon substrate 10, a p-type first epitaxially grown layer 2 is formed on the layer 3, and an n-type impurity diffused layer 1 is formed on the layer 2. A contact layer 4 for a diffused layer and a contact layer 5 for an epitaxially growing layer are formed, aluminum electrodes 12 for respective pads are formed on the layers 4 and 5, and an output can be obtained from the layer 1 and the layer 2. Further, a dug 7 for isolating elements is provided by etching to a region of a ground silicon substrate 10 to insulate between the elements. The part 7 is needed to surround the regions of the respective elements.
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