发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING AND DESIGNING METHOD THEREFOR |
摘要 |
PURPOSE: To improve planarity further for a boundary part of a chip, when planarity process in a CMP method is used. CONSTITUTION: In the semiconductor device, a dummy pattern 2b made of the same material as a wiring pattern 1 is formed inside a dicing part at a chip boundary part in a prescribed hierarchy out of laminated hierarchies on a semiconductor substrate is formed inside a dicing part. The area of the dummy pattern 2b with to respect the total area of the flat region is made 50% or larger in area constituted by the inner edge of the dummy pattern 2b, the outer edge line of the dicing part, and two desired parallel lines. |
申请公布号 |
KR20020060561(A) |
申请公布日期 |
2002.07.18 |
申请号 |
KR20010060376 |
申请日期 |
2001.09.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHINKAWATA HIROKI |
分类号 |
H01L23/52;H01L21/304;H01L21/3105;H01L21/3205;H01L21/822;H01L23/528;H01L27/02;H01L27/04;(IPC1-7):H01L21/304 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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