发明名称 SEMICONDUCTOR DEVICE, MANUFACTURING AND DESIGNING METHOD THEREFOR
摘要 PURPOSE: To improve planarity further for a boundary part of a chip, when planarity process in a CMP method is used. CONSTITUTION: In the semiconductor device, a dummy pattern 2b made of the same material as a wiring pattern 1 is formed inside a dicing part at a chip boundary part in a prescribed hierarchy out of laminated hierarchies on a semiconductor substrate is formed inside a dicing part. The area of the dummy pattern 2b with to respect the total area of the flat region is made 50% or larger in area constituted by the inner edge of the dummy pattern 2b, the outer edge line of the dicing part, and two desired parallel lines.
申请公布号 KR20020060561(A) 申请公布日期 2002.07.18
申请号 KR20010060376 申请日期 2001.09.28
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SHINKAWATA HIROKI
分类号 H01L23/52;H01L21/304;H01L21/3105;H01L21/3205;H01L21/822;H01L23/528;H01L27/02;H01L27/04;(IPC1-7):H01L21/304 主分类号 H01L23/52
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