发明名称 PLASMA PROCESS DEVICE USING SATURABLE REACTOR AND PLASMA PROCESS METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma process device, compact and of high power efficiency which can surely protect a DC high voltage generating circuit from rush current. SOLUTION: A DC high voltage generating circuit 4 equipped with a transformer 20 and a rectifier 21 in a plasma process device, generates DC high voltage from three-phase AC voltage. Then, an impulse circuit 5 generates high-voltage and high-frequency pulse voltage from DC high voltage and impresses it between a discharge electrode 1 and an opposing electrode 2, so that plasma is generated by corona discharge. A saturable reactor 17 is set at a power input lead 16 from AC power supply to DC high voltage generating circuit 4, to prevent generation of rush current at the DC high voltage generating circuit 4, then to surely protect the DC high voltage generating circuit 4. Therefore, protective resistance is not set at the impulse circuit 5, whereby, the plasma process device is downsized and its power efficiency is improved.
申请公布号 JP2002260900(A) 申请公布日期 2002.09.13
申请号 JP20010061977 申请日期 2001.03.06
申请人 NIPPON PAINT CO LTD 发明人 AKUTSU KENSUKE
分类号 H05H1/46;B01J19/08;H01L21/205 主分类号 H05H1/46
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