发明名称 |
Variable capacitor single-electron device |
摘要 |
The present invention provides a single-electron transistor device 100. The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the source and drain, to form tunnel junctions 125, 130 between the source and drain. The device further includes a fixed-gate electrode 135 located adjacent the quantum island 120. The fixed-gate electrode has a capacitance associated therewith that varies as a function of an applied voltage to the fixed-gate electrode. The present invention also includes a method of fabricating a single-electron device 300, and a transistor circuit 800 that include a single-electron device 810.
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申请公布号 |
US2005040389(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040960239 |
申请日期 |
2004.10.07 |
申请人 |
TEXAS INSTRUMENTS, INCORPORATED |
发明人 |
WASSHUBER CHRISTOPH |
分类号 |
H01L29/76;(IPC1-7):H01L29/06;H01L27/01;H01L27/12;H01L39/00;H01L31/039 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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