发明名称 |
Patterned Silicon-on-Insulator layers and methods for forming the same |
摘要 |
In an aspect, a method is provided for forming a silicon-on-insulator (SOI) layer. The method includes the steps of (1) providing a silicon substrate; (2) selectively implanting the silicon substrate with oxygen using a low implant energy to form an ultra-thin patterned seed layer; and (3) employing the ultra-thin patterned seed layer to form a patterned SOI layer on the silicon substrate. Numerous other aspects are provided.
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申请公布号 |
US2006286779(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20050155029 |
申请日期 |
2005.06.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH ROGER A.JR.;HSU LOUIS L.;MANDELMAN JACK A.;TONTI WILLIAM R. |
分类号 |
H01L21/76;H01L21/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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