METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate capable of improving crystallinity in the crystal layer of a group III nitride semiconductor. SOLUTION: The manufacturing method of the semiconductor substrate related to a first aspect includes: a chromium layer film formation process for film-forming a chromium layer on a base substrate at not less than 50°C temperature; and a nitriding process for nitriding the chromium layer for forming a chromium nitride film. COPYRIGHT: (C)2008,JPO&INPIT