| 摘要 |
PROBLEM TO BE SOLVED: To provide a terahertz wave radiation apparatus, and a manufacturing method thereof which enhances a radiation efficiency for the terahertz wave and manufactures the apparatus at a low cost. SOLUTION: The terahertz wave radiation apparatus comprises: an SiC wafer 201; a CNW layer 202 consisting of a carbon nano-structure and formed selectively in a part of the surface of the SiC wafer 201; a cathode electrode layer 203 electrically connected to the SiC wafer 201; an anode transparent electrode layer 205 located above the SiC wafer 201 so that it is apart from and opposed to the CNW layer 202; and an insulating electrically isolating layer 204 located between the SiC wafer 201 and the anode transparent electrode layer 205 and having a through hole extending from the anode transparent electrode layer 205 to the CNW layer 202. COPYRIGHT: (C)2008,JPO&INPIT
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