| 摘要 |
A static memory device is provided to reduce the damage of edges of an active region and an isolation region by employing a shared contact. Active regions(110,120) are formed on a semiconductor substrate to be extended in one direction. A gate line(220) is formed to be extended in another direction. A protrusion unit is formed at an end of the gate line. At least part of the protrusion unit is overlapped with an end of the active region. A shared contact(520) is formed at a part of the active region, at a part of the gate line, and on a region at which the active region and the gate line are overlapped with each other. The shared contact includes a first region, a second region, and a third region. The first region is overlapped with the active region. The second region is overlapped with the gate line. The third region connects the first region and the second region. The third region crosses the region at which the active region and the gate line are overlapped with each other. The first region and the second region are not in parallel with each other.
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