METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A manufacturing method of the semiconductor device is provided to form the metal oxide layer by using the oxygen generated during the process of the ruthenium reduction. The metal layer(11) and ruthenium oxidation are laminated. At this time, the ruthenium oxidation can be laminated on the metal layer. Moreover, the metal layer can be laminated on the ruthenium oxidation. The metal oxide layer(13) is formed by reacting he metal layer with the oxygen within the ruthenium oxidation by the thermal process(100). The thermal process can be performed in the temperature for which the ruthenium oxide layer is reduced to the ruthenium layer(12A). The thermal process can be progressed in 300°C~600°C.