| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to improve the electrical characteristic of the semiconductor device by increasing the process margin about the contact holes positioned between gates. A semiconductor device comprises a substrate(30), gates(31,32,33), the first spacer(39A) and the second spacer(39B). Gates are arranged in the cell region and the peri area. The first spacers are arranged on the side walls of the gates of the cell region. The second spacers are arranged on the side walls of the gates of the peri area. The thickness of first spacers is smaller than the thickness of second spacers. A manufacturing method of the semiconductor device comprises the formation of the gates, the first spacer, and the second spacer.
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