High-energy ion implanter

摘要

A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.

主权项

1. A high-energy ion implanter that accelerates an ion beam extracted from an ion source, transports the ion beam to a wafer along a beamline, and implants the ion beam into the wafer, the high-energy ion implanter comprising:
a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates the ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; a beam transportation unit that transports the deflected high-energy ion beam to the wafer; and a substrate processing/supplying unit that uniformly implants the transported high-energy ion beam into the wafer, wherein the beam transportation unit includes a beam focusing/defocusing unit, an electrostatic beam scanner for high-energy beam, an electrostatic beam collimator for high-energy beam, and an electrostatic final energy filter for high-energy beam, wherein the high-energy ion beam emitted from the deflection unit is scanned and collimated by the electrostatic beam scanner and the electrostatic beam collimator, mixed ions which are different in at least one of a mass, an ion charge state, and energy are removed by the electrostatic final energy filter for high-energy beam, and the resultant ions are implanted into the wafer, and wherein the deflection unit is configured by a plurality of deflection electromagnets, and at least one horizontal focusing element is inserted between the plurality of deflection electromagnets.