| 发明名称 |
METHOD FOR FORMING A NANOWIRE STRUCTURE |
| 摘要 |
Embodiments of the invention describe a method for forming a nanowire structure on a substrate. According to one embodiment, the method includes a) depositing a first semiconductor layer on the substrate, b) etching the first semiconductor layer to form a patterned first semiconductor layer, c) forming a dielectric layer across the patterned first semiconductor layer, and d) depositing a second semiconductor layer on the patterned first semiconductor layer and on the dielectric layer. The method further includes e) repeating a)-d) at least once, f) following e), repeating a)-c) once, g) etching the patterned first semiconductor layers, the dielectric layers, and the second semiconductor layers to form a fin structure, and h) removing the patterned first semiconductor layers from the fin structure. |
| 申请公布号 |
US2016204228(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201614993935 |
申请日期 |
2016.01.12 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Tapily Kandabara N.;Nakamura Genji |
| 分类号 |
H01L29/66;H01L29/423;H01L29/786;H01L29/06 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of forming a nanowire structure on a substrate, the method comprising:
a) depositing a first semiconductor layer on the substrate; b) etching the first semiconductor layer to form a patterned first semiconductor layer; c) forming a dielectric layer across the patterned first semiconductor layer; d) depositing a second semiconductor layer on the patterned first semiconductor layer and on the dielectric layer; e) repeating a)-d) at least once; f) following e), repeating a)-c) once; g) etching the patterned first semiconductor layers, the dielectric layers, and the second semiconductor layers to form a fin structure; and h) removing the patterned first semiconductor layers from the fin structure. |
| 地址 |
Tokyo JP |
