DATA STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.

主权项

1. A method of operating a data storage device including a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device, the nonvolatile memory device including a plurality of memory blocks, each memory block including a memory cells stacked along a direction vertical to a substrate, a first cell string and a second cell string of the each memory block being connected to a bit line from among a plurality of bit lines, each cell string including selection transistors and serially-connected memory cells, the selection transistors including at least one string selection transistor (SST) and at least one ground selection transistor (GST), the SST of the first cell string and the SST of the second cell string being connected to different selection lines from among a plurality of selection lines, respectively, and the GST of the first cell string and the GST of the second cell string being connected to a same selection line from among the plurality of selection lines or different selection lines from among a plurality of selection lines, respectively, the method comprising:
reading a first selection transistors connected to a first selection line from among the plurality of selection lines with a reference voltage; determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value; and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.