发明名称 THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
摘要 A thin-film transistor and a manufacturing method therefor, an array substrate and a display device. The thin-film transistor comprises a source electrode (1), a drain electrode (2) and an active layer (3), wherein the source electrode (1), the drain electrode (2) and the active layer (3) are disposed on the same layer, the source electrode (1) and the drain electrode (2) are respectively connected to the active layer (3) by side faces (1b, 2b) thereof, the material of the source electrode (1) and the drain electrode (2) is a metal, and the material of the active layer (3) is a metal oxide semiconductor corresponding to the material of the source electrode (1) and the drain electrode (2). The thin-film transistor requires fewer working procedures and lower costs.
申请公布号 WO2016123979(A1) 申请公布日期 2016.08.11
申请号 WO2015CN89424 申请日期 2015.09.11
申请人 BOE TECHNOLOGY GROUP CO., LTD.;HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 SONG, BOTAO;LIN, LIANG;ZOU, ZHIXIANG;HUANG, YINHU
分类号 H01L29/786;H01L21/34;H01L21/44;H01L27/02;H01L29/417 主分类号 H01L29/786
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