发明名称 |
METHOD OF PREPARING RESIST PATTERN |
摘要 |
A method of preparing a fine and highly precise resist pattern comprising a step of forming a positive resist layer consisting of poly-(methacrylic anhydride) on a substrate, a step of irradiating the resist layer thus formed with a predetermined pattern of ionizing radiation and a step of developing the irradiated resist pattern with a developer comprising a solvent mixture composed of a polar organic solvent (A) capable of dissolving poly-(methyacrylic anhydride) and a non-solvent (B) incapable of dissolving poly-(methacrylic anhydride). |
申请公布号 |
GB2038492(A) |
申请公布日期 |
1980.07.23 |
申请号 |
GB19790038826 |
申请日期 |
1979.11.09 |
申请人 |
VLSI TECHNOLOGY RESEARCH ASSOCIATION |
发明人 |
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分类号 |
G03F1/00;G03F1/68;G03F1/80;G03F7/039;G03F7/32;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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