| 摘要 |
PURPOSE:To provide a semiconductor laser which can not only oscillate with low threshold but oscillate with large light output due to basic lateral mode oscillation, can be manufacturd by one grown and has excellent reproducibility and reliability. CONSTITUTION:The first clad layer 12 is grown in a deep groove along the wall surface of the groove, and grown thinly on the flat region out of the groove. A guide layer 13 which is subsequently grown is formed thickly on the deep groove and thinly on the flat region out of the groove. A light is impregnated from an active layer 14 into a guide layer in the deep groove, but the refraction becomes effectively high at the thick layer region due to the difference of the impregnated light amount based on the difference of the thickness of the layers 13. Accordingly, the refractive index of the layer 14 adjacent to the groove region grown thickly at the guide layer can be effectively increased in this structure, effective positive refractive index difference is anchored within the active layer, and the light can be maintained in the wide current implantation region in the stable basic lateral mode oscillation. |
