| 摘要 |
PURPOSE:To form a highly accurate buried diffused layer by leaving the SiO2 film generated simultaneously at the rear side on the occasion of patterning a positioning mark after forming a buried diffused layer, and thereafter forming an epitaxial layer on the surface of substrate by the epitaxial growth method. CONSTITUTION:After a buried diffused layer is formed, an n type resist film is applied again on the surface of SiO2 film 2, it is exposed and a resist film pattern 12 is formed, moreover an n type resist film 13 is applied thereon and it is not exposed. Therafter, an n type resist film 14 is applied at the rear side and entire part thereof is exposed. Next, the unexposed resist film 13 is dissolved and removed and the surface is etched by the fluoric acid solution with the resist film pattern 12 and the resist film 14 on the rear side used as the mask, leaving the positioning SiO2 film mark 15 and the SiO2 film 11 at the rear side. Thereafter, the resist film pattern 12 and the resist film at the rear side are dissolved and removed by a solvent. Next, an epitaxial layer 16 is laminated through epitaxial growth method on the substrate surface but the epitaxial layer is not formed on the SiO2 film mark 15. |
