发明名称 |
PLASMA TREATING DEVICE AND PLASMA TREATING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treating device capable of reducing a cost, enhanc ing plasma density and the ability. SOLUTION: The space between electrodes 2 and 3 arranged to face each other is formed as a discharge space 34. The discharge space 34 side of at least one electrode 2 (or electrode 3) of the electrodes 2 and 3 arranged to face each other is provided with a dielectric substance 32. This plasma treating device generates a dielectric substance barrier discharge in the discharge space 34 at the pressure near to atmospheric pressure by supplying plasma-forming gas to the discharge space 34 and impressing voltage between the electrodes 2 and 3. The waveform of the voltage to be impressed between the electrodes 2 and 3 is specified to an alternating voltage waveform having no quiescent time and the rising time of the alternating voltage waveform is confined to <=100 μsec. |
申请公布号 |
JP2002058995(A) |
申请公布日期 |
2002.02.26 |
申请号 |
JP20000250285 |
申请日期 |
2000.08.21 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD;HAIDEN KENKYUSHO:KK |
发明人 |
TAGUCHI NORIYUKI;SAWADA KOJI;MATSUNAGA KOICHI;YUKIMURA KEN |
分类号 |
H05H1/24;B01J19/08;H01L21/205;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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