| 摘要 |
PURPOSE:To facilitate oscillation with a low threshold current and obtain a laser device which can be efficiently employed as a light source for a high performance and high integrity OEIC by a method wherein a whole or a part of a quantum well active layer is doped with high concentration impurity and electron density and positive hole density are artificially controlled. CONSTITUTION:The semiconductor laser device has a multilayer well active layer 3 which is composed of well layers 3a which have thicknesses smaller than DeBroy wavelength of electron and barrier layers 3b which have larger forbidden band widths than the well layers 3a which are laminated alternately. The active layer 3 of the semiconductor laser device may be GRIN-SCH type. Then P-type or N-type impurity, or P-type and N-type impurity, or P-type impurity and N-type impurity is or are introduced into the well layers 3a only, or into the barrier layers 3b only, or into both the well layers 3a and the barrier layers 3b so as to make the concentration of the P-type impurity not less than 4X10<18>cm<-3> or make the concentration of the N-type impurity not less than 2X10<18>cm<-3>. With this constitution, a device with a low threshold current can be realized and high reliability can be obtained. This device is especially effective to be used as an optoelectric integrated circuit or as its light source.
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