METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A BASE REGION HAVING A DEEP PORTION,申请号IE19830001223-传众专利搜索

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发明名称	METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A BASE REGION HAVING A DEEP PORTION
摘要
申请公布号	IE56041(B1)	申请公布日期	1991.03.27
申请号	IE19830001223	申请日期	1983.05.24
申请人	GENERAL ELECTRIC COMPANY	发明人
分类号	H01L29/73;H01L21/033;H01L21/331;H01L21/336;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L21/00	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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