| 摘要 |
PURPOSE: To dispense with the use of HCl in growing an AlInP buried layer by an MOVPE method in an AlGaInP red semiconductor laser. CONSTITUTION: A semiconductor laser is so constituted that an MQW active layer 105, which consists of a GaInP (well) layer and an AlGaInP (barrier) layer, is held between AlGaInP light guide layers 104 and 106, AlGaInP clad layers 103 and 107 are arranged on both sides of the layer 105, the P side clad layer 107 is processed into a mesa type and the side surfaces of the mesa part of the layer 107 are filled with a material (an AlInP), which has a band gap larger than that of the layer 105 and has a refractive index lower than that of the clad layers 104 and 106. In the laser, the film thickness of an AlInP current blocking layer 110 is formed in a thickness of 0.5μm or thinner.
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