| 摘要 |
<p>PROBLEM TO BE SOLVED: To decrease spot defects as bright or dark spots caused by short circuits between drain bus lines and pixel electrodes by forming an insulating film for pixel electrodes comprising a gate insulating film and a passivation film in such a manner that a part of the insulating film for pixel electrodes consists of only a passivation film. SOLUTION: Two layers of a gate insulating film 114 and a passivation film 115 are present as upper layers on a gate bus line and gate electrode 101, while an insulating film for a pixel electrode under a pixel electrode 106 consists of only the passivation film 115. The passivation film 115 as an insulating film is also formed between the drain bus line and the pixel electrode 106. In the production process, by removing the gate insulating film 114 under the pixel electrode 106 in contact processes, an a-Si residue produced due to patterning failure in island-forming processes can be removed at one time.</p> |
