发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To facilitate boring of connection holes for connecting different wiring layers and burying a conductor film. SOLUTION: At peripheral circuit regions of DRAM, connection holes for electrically connecting a first layer wiring 14 and a second layer wiring 26 are twice bored to form connection holes 17a, 17b, and, after forming the connection holes 17a, 17b, plugs 18a, 25a are formed in the respective connection holes 17a, 17b.
申请公布号 JPH11204753(A) 申请公布日期 1999.07.30
申请号 JP19970348823 申请日期 1997.12.18
申请人 HITACHI LTD 发明人 NAKAMURA YOSHITAKA;ASANO ISAMU;KAWAKITA KEIZO;YAMADA SATORU
分类号 H01L21/768;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L27/108;H01L21/824 主分类号 H01L21/768
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