| 摘要 |
PURPOSE: A semiconductor laser diode array device is provided to be operated with high output. CONSTITUTION: A semiconductor laser diode array device includes a plurality of grooves formed by selectively etching an n-type GaAs substrate. Then, an n-type GaAsIP buffer layer, an n-type InGaAIP clad layer(103) and a p/n alternating InGaAIP current shield layer(104), an InGaP active layer(105), a p-type InGaAIP clad layer, a p-type InGaP electrifying facilitation layer, and a p-type GaAs cap layer are crystally grown by organic metal vapor growth method. At this time, when n-type InGaAIP clad layer(103) and a p/n alternating InGaAIP current shield layer(104) are grown, dimethylzinc being a p-type dopant supply source is intermittently supplied while hydrogenselenide being an n-type supply source is continuously supplied. Thus, if only the n-type dopant supply source is provided, both the slant face and the flat face are doped with n-type. On the other hand, if the n-type dopant supply source and the p-type dopant supply source are simultaneously supplied, the slant face is doped with p-type while the flat face is doped with n-type.
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