| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a high-speed, highly integrated and highly reliable SOI type C-MOS semiconductor device. SOLUTION: The SOI type C-MOS semiconductor device has a following damascene double-gate type common metal source drain among different channel structures. First, second, and third metal source drain regions (6a, 6b, 6c) are formed partly in contact with opposite side faces of each of a pair of p type and n type SOI substrate (3, 4) which are laminated on a semiconductor substrate 1 via an insulation film 2 and are made thin and are insularly insulated and separated from each other. In the parts of the SOI substrates which are in contact with the metal source drain regions, heavily-doped and lightly-doped source drain regions (10, 11, 12, 13), having the opposite conductivity type from that of the SOI substrates are formed. Being insulated and separated from each metal source drain region, a first gate electrode 9 is embedded flat on the lower surface of both SOI substrates via a first gate oxide film 7 and a second gate electrode 16 is embedded flat on the upper surface via a second gate oxide film 14, with the first and second gate electrodes being connected to each other.
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