发明名称 |
METHODS FOR GROWTH OF RELATIVELY LARGE STEP-FREE SIC CRYSTAL SURFACES |
摘要 |
A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, A1N, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power stitching devices) that are sensitive to extended crystal defects. |
申请公布号 |
WO02063075(A2) |
申请公布日期 |
2002.08.15 |
申请号 |
WO2002US01176 |
申请日期 |
2002.01.17 |
申请人 |
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, ASREPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (NASA) |
发明人 |
NEUDECK, PHILIP, G.;POWELL, J., ANTHONY |
分类号 |
C30B25/02;C30B25/18;H01L21/20 |
主分类号 |
C30B25/02 |
代理机构 |
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