| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a silicon carbide semiconductor device with a good repeatability and uniformity at a low cost. SOLUTION: A method of manufacturing silicon carbide semiconductor device contains the steps of epitaxially growing a first conductive type silicon carbide drift layer 2 on a first conductive type silicon carbide substrate 1, forming an ion implantation extended layer 3 on the silicon carbide drift layer 2, forming an ion implantation mask 4 having an opening in a region corresponding to a base region on the ion implantation extended layer 3, ion-implanting a second conductive type impurity in the ion implantation extended layer 3 and the silicon carbide drift layer 2 by using the ion implantation mask 4, removing the ion implantation extended layer 3 of an opening bottom by etching, ion-implanting a first conductive type impurity in the silicon carbide drift layer 2 by using the ion implantation mask 4, removing the ion implantation mask 4 and the ion implantation extended layer 3, and forming a gate electrode 9 between the base regions. COPYRIGHT: (C)2005,JPO&NCIPI
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