发明名称 |
Plasma etching method and plasma etching unit |
摘要 |
The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having a silicon film and an inorganic-material film adjacent to the silicon film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the silicon film of the substrate by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
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申请公布号 |
US2005039854(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040959585 |
申请日期 |
2004.10.07 |
申请人 |
MATSUYAMA SHOICHIRO;HONDA MASANOBU;NAGASEKI KAZUYA;HAYASHI HISATAKA |
发明人 |
MATSUYAMA SHOICHIRO;HONDA MASANOBU;NAGASEKI KAZUYA;HAYASHI HISATAKA |
分类号 |
H01L21/3065;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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