| 摘要 |
The present invention provides a semiconductor memory device including a memory cell array in which a plurality of memory cells are arranged, a user interface circuit including a command queue having a logic circuit for accepting commands issued by an external user and generating a program memory address, and an array control circuit having a microcontroller and a program memory for storing therein an execution code, and executing an operation on the memory cell array, wherein the memory cell includes a gate electrode formed over a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional elements formed on both sides of the gate electrode and having the function of retaining charges.
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