| 摘要 |
A method of forming a high-K dielectric film by the MOCVD method using an amine-based organic metal compound precursor is disclosed. According to the present method, a precursor gas including organic metal compound molecules of the amine-based organic metal compound precursor is supplied to a processing space that accommodates a substrate to be processed, the surface of the substrate being exposed so that the amine-base organic metal compound molecules are chemically adsorbed onto the surface of the substrate. Then, a hydrogen gas is supplied to the surface of the substrate, and an oxidization gas is introduced into the processing space to thereby form the high-K dielectric film on the surface of the substrate.
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