| 摘要 |
A system for growing silicon carbide crystals on substrates is described and comprises a chamber ( 1 ) which extends along an axis, wherein the chamber ( 1 ) has separate input means ( 2 , ;) for gases containing carbon and for gases containing silicon, substrate support means ( 4 ) disposed in a first end zone (ZI) of the chambe, exhaust output means ( 5 ) disposed in the vicinity of the support means ( 4 ), and heating means adapted for beating the chamber ( 1 ) to a temperature greater than 1800° C.'; the input means ( 2 ) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z 2 ) of the chamber; the input means ( 3 ) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and tire silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone (ZI) and from the second end zone (Z 2 ).
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