| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing equipment of an electro-optic device capable of suppressing the variation in the etching rate at the time of the wet etching of a silicon oxide film, and to provide a manufacturing method of the electro-optic device. SOLUTION: A parallel plate plasma CVD device supplies electric power of different frequency respectively to a lower electrode 210 wherein a substrate for electro-optic devices is arranged and to an upper electrode 220 formed oppositely to the lower electrode 210, makes TEOS gas to be supplied between both the electrodes into a plasma state, and forms a silicon oxide film by using a plasma CVD method on a wafer substrate 10b. In this device, the ratio is made 0.3 or less with respect to the proportion of the value of low frequency power supplied to the lower electrode 210 wherein the substrate 10b is arranged to the value of high frequency power supplied to the upper electrode 220. COPYRIGHT: (C)2008,JPO&INPIT
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