| 发明名称 |
FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF |
| 摘要 |
PROBLEM TO BE SOLVED: To realize a field-effect transistor wherein the contact resistance of a source electrode and a drain electrode is small and the electrodes can easily be formed. SOLUTION: This field-effect transistor is formed on a substrate 10, and comprises a nitride semiconductor laminate 20 including a cap layer 25 denoted by the general formula: InxAlyGa1-yN (0<x≤1, 0≤y<1, 0<x+y≤1), and a non-alloy source electrode 31 and a non-alloy drain electrode 32 formed on the cap layer 25 and spaced apart from each other. COPYRIGHT: (C)2008,JPO&INPIT
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| 申请公布号 |
JP2007324263(A) |
申请公布日期 |
2007.12.13 |
| 申请号 |
JP20060151051 |
申请日期 |
2006.05.31 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAZAWA TOSHIYUKI;UEDA TETSUZO |
| 分类号 |
H01L21/338;H01L21/28;H01L21/336;H01L29/417;H01L29/778;H01L29/78;H01L29/786;H01L29/812 |
主分类号 |
H01L21/338 |
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