| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device having a large storage capacity and excellent in heat resistance, and to provide its fabrication process. SOLUTION: The magnetic memory device has regulation regions 32 for regulating movement of a magnetic domain wall 30 formed at a predetermined interval; and a means 24 having a linear recording layer 22 where the region between the regulation regions becomes a recording bit 34, and for imparting uniaxial magnetic anisotropy to the recording layer 22. Since a means for imparting uniaxial magnetic anisotropy to the recording layer is provided, sufficient uniaxial magnetic anisotropy can be attained in the recording layer. Consequently, a magnetic memory device having high heat resistance can be provided even when the recording layer has a comparatively narrow width D. COPYRIGHT: (C)2008,JPO&INPIT
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