| 发明名称 |
RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS |
| 摘要 |
Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands.
|
| 申请公布号 |
US2009028745(A1) |
申请公布日期 |
2009.01.29 |
| 申请号 |
US20080179239 |
申请日期 |
2008.07.24 |
| 申请人 |
GATINEAU JULIEN;DUSSARRAT CHRISTIAN |
发明人 |
GATINEAU JULIEN;DUSSARRAT CHRISTIAN |
| 分类号 |
C22C5/04;H01L21/31 |
主分类号 |
C22C5/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
