| 摘要 |
<p>The semiconductor component (10) has an integrated circuit, which comprises a light detector provided with a coating (32,34,36) containing silicon nitride or silicon dioxide. A layer strength of the silicon containing coating is selected such that, a predetermined narrow band wavelength selective transmission of light waves, particularly of light waves in a wavelength range from 400 nanometer to 850 nanometer is attainable. Independent claims are also included for the following: (1) a lighting device for a screen, particularly matrix screen (2) a method for manufacturing an integrated circuit.</p> |
