发明名称 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistive element in which the deterioration in magnetic characteristics is suppressed. SOLUTION: The magnetoresistive element is manufactured through: a first step of forming a magnetic film 3 over the entire top surface of a silicon substrate 1 and forming a first insulating film 4 having a predetermined pattern for forming a predetermined pattern of the magnetic film 3 on the top surface of the magnetic film 3 by isotropic etching; and a second step of forming the magnetic film 3 in the predetermined pattern based upon the predetermined pattern of the first insulating film 4 by anisotropic etching. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049191(A) 申请公布日期 2009.03.05
申请号 JP20070213818 申请日期 2007.08.20
申请人 TOKAI RIKA CO LTD 发明人 TANAKA KATSUHIRO;YAMAZAKI YOSHIHIRO
分类号 H01L43/12;H01L21/3065;H01L43/08 主分类号 H01L43/12
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