发明名称 |
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive element in which the deterioration in magnetic characteristics is suppressed. SOLUTION: The magnetoresistive element is manufactured through: a first step of forming a magnetic film 3 over the entire top surface of a silicon substrate 1 and forming a first insulating film 4 having a predetermined pattern for forming a predetermined pattern of the magnetic film 3 on the top surface of the magnetic film 3 by isotropic etching; and a second step of forming the magnetic film 3 in the predetermined pattern based upon the predetermined pattern of the first insulating film 4 by anisotropic etching. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009049191(A) |
申请公布日期 |
2009.03.05 |
申请号 |
JP20070213818 |
申请日期 |
2007.08.20 |
申请人 |
TOKAI RIKA CO LTD |
发明人 |
TANAKA KATSUHIRO;YAMAZAKI YOSHIHIRO |
分类号 |
H01L43/12;H01L21/3065;H01L43/08 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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