| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to simplify a silicide manufacturing process and to form an exact pattern by developing a photoresist in which monochlorobenzen is coated. A gate and a gate spacer(6) are formed on a semiconductor substrate(1). After coating a photoresist, monochlorobenzen is coated on the photoresist. The photoresist is developed. An oxide film is deposited by using a low temperature oxide process. An overhang structure(30) is formed on a photoresist layer(20) by removing the oxide film which is in a silicide region. A metal film is deposited.</p> |
