| 摘要 |
PROBLEM TO BE SOLVED: To provide a glassy carbon material coated with SiC film, which is suitably employed as a heat treatment member for a semiconductor producing apparatus and also as a heat resistant member used in the atmosphere of high temperature and of high purity, and provide a method for producing the same. SOLUTION: The SiC film is coated on the glassy carbon material by a chemical vapor deposition(CVD) method, the X-ray diffraction peak strength of the SiC crystal face (111) of the film is <=10 kc.p.s, and the diffraction peak strength of the SiC crystal face (111) is >=80% of the diffraction peak strength of the whole crystal faces (hkl). The above diffraction peak strength is determined under the following conditions: X-ray source is Cuk α; tube bulb voltage is 40 kV; tube bulb current is 20 mA; filter is Ni-filter; divergent slit is 1 deg., scattering slit is 1 deg.; and light receiving slit is 0.3 mm. |
