发明名称 |
Polishing composition |
摘要 |
There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound. |
申请公布号 |
US9376594(B2) |
申请公布日期 |
2016.06.28 |
申请号 |
US201314385298 |
申请日期 |
2013.03.11 |
申请人 |
FUJIMI INCORPORATED |
发明人 |
Tamada Shuichi;Yarita Satoru |
分类号 |
H01L21/302;C09G1/02;H01L21/321;H01L21/306;H01L21/02;C09K3/14;C23F1/30;C23F1/40;C23F3/02 |
主分类号 |
H01L21/302 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
主权项 |
1. A polishing method comprising,
polishing a polishing object including a portion comprising germanium (Ge) with a polishing composition, wherein the polishing composition comprises an oxidizing agent and an anticorrosive agent, and wherein the anticorrosive agent comprises at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. |
地址 |
Kiyosu-Shi JP |