Exposure apparatus and exposure system

摘要

An exposure apparatus is provided. It comprises: a substrate stage on which a holding region is provided to hold a substrate to be exposed, the holding region being provided with a support portion thereon for supporting the substrate to be exposed; a supporter configured to support a mask; a light source system configured to provide an exposure light which is illuminated on the substrate to be exposed via the mask to reproduce a pattern of the mask onto the substrate, wherein the support portion has a height which decreases gradually from an outer periphery of the holding region to a center of the holding region, such that an exposure distance is constant at all of positions on the holding region. With the above structure, the graph dimension may be kept uniform on the substrate even if the mask becomes bent.

主权项

1. An exposure apparatus, comprising:
a substrate stage on which a holding region is provided to hold a substrate to be exposed, the holding region being provided thereon with a support portion for supporting the substrate to be exposed; a supporter configured to support a mask; a light source system configured to provide an exposure light which is illuminated on the substrate to be exposed via the mask to reproduce a pattern of the mask onto the substrate; wherein the support portion has a height which decreases gradually from an outer periphery of the holding region to a center of the holding region, such that an exposure distance is constant at all of positions on the holding region; wherein the support portion comprises fixed parts and adjustable parts arranged onto the fixed parts, tops of the fixed parts being in the same horizontal place, the distances between the mask and the tops of the adjustable parts being constant at all of positions on the tops of the adjustable parts; and wherein the height HN of the support portion meets:
HN=HO+Δh, Δh=H[1−(l/L)n] wherein HO is the height of the fixed parts, Δh is the height of the adjustable parts, i.e., the variation of the exposure distance caused by bending of the mask, l is the distance between a point on the mask and a central point of the mask, L is the distance between the central point and an edge of the mask along a line connecting the point on the mask and the central point of the mask, H is the maximum variation of the exposure distance caused by bending of the mask, and n is a deformation index which is greater than 1 and determined by both the dimension of the mask and the mask supporter of the exposure apparatus.