CHEMICAL MECHANICAL POLISHING APPARATUS

摘要

The present invention relates to a chemical mechanical polishing apparatus, as a chemical mechanical polishing apparatus for polishing a polishing layer of a wafer on which multiple devices are disposed at intervals for manufacturing the multiple devices. The chemical mechanical polishing apparatus is configured to comprise: a polishing plate having a polishing pad, which is in contact with the polishing layer of the wafer, coated on the upper surface thereof, and rotating; and an optical sensor for sensing the polishing layer thickness of the wafer by irradiating the polished surface of the wafer with a light, and having the spot size of the light formed greater than at least one from the width and length of the device. The thickness of the polishing layer is accurately sensed from a reflected light receiving signal incident to the polishing layer in enlarged dimensions.