Contact area prodn on semiconductor substrates - by aluminium deposited from vapour phase through mask irradiated by UV light

摘要

Connection and contact areas in the shape of plateaus of bumps on semiconductor, thin film and thick film substrates are produced by metal deposition from the vapour phase. The metal used is aluminium, deposited by the decompsn. of triisobutyl aluminium. The substrate areas concerned are illuminated through a mask with u.v. light, whereby the distance between the substrate surface and the mask is kept to 0.1-1mm.